GaN Systems and ON Semiconductor make available 300W AC adapter reference design

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) and power semiconductor IC supplier ON Semiconductor of Phoenix, AZ, USA have announced the availability of what is claimed to be the highest-power-density 300W AC adapter reference design using GaN Systems’ 650V, 15A GaN enhancement-mode high-electron-mobility transistors (E-HEMTs) and multiple ON Semiconductor controller and driver ICs: NCP51820, NCP13992, NCP1616 and NCP4306.

The complete system reference design is said to be highly versatile and low cost, allowing designers to easily develop and bring to market ultra-high-power-density adapters for various applications in HDTV power supplies, gaming notebook and console adapters as well as ultra-small power supplies for industrial and medical devices.

The kit and application note provide detailed technical information including schematic, PCB layout and BOM (bill of material) files, and EMI and efficiency data. The kit hardware has complete PFC, LLC and secondary stages, and features a high-efficiency synchronous PFC that meets the CoC T2 benchmark, a highly versatile low-cost 2-Layer design, and universal input with 19V output at 340W peak. System designers using this GaN-based reference design can reach power densities up to 32W per cubic inch, it is reckoned.

“Fast-switching GaN works effectively with our advanced controller and drivers to optimize system designs for high power density, removing design barriers and enabling designers to take advantage of the numerous benefits provided by GaN E-HEMTs,” says ON Semiconductor’s director of marketing Ryan Zahn,. “With rising interest and adoption of GaN, we look forward to continued collaboration with GaN Systems to support and meet the new power requirements taking place across many industries,” he adds.

“Our collaboration combines ON Semiconductors’ system applications expertise and industry-leading power IC products with the world’s most advanced 650V GaN E-HEMTs,” Charles Bailley, senior director, worldwide business development, at GaN Systems. “This reference design, developed in collaboration with ON Semiconductor, makes it easier and more cost effective to design as GaN gains popularity as a building block in the adapter market,” he adds. “This release is the first of several systems and integrated packaging innovations in development, which will significantly expand the GaN ecosystem.”

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.onsemi.com

Visit: www.gansystems.com