TI launches ready-to-use 600V GaN FET power stages supports applications up to 10kW

Dallas-based Texas Instruments Inc (TI) has launched a portfolio of ready-to-use 600V gallium nitride (GaN) 50mΩ and 70mΩ power stages to support applications up to 10kW.

The firm says that its LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared with silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.

The GaN FET devices provide an alternative to traditional cascade and stand-alone GaN FETs by integrating functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100ns current limiting and over-temperature detection, they protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.

Key features and benefits of the LMG3410R050, LMG3410R070 and LMG3411R070 include:

Smaller, more efficient solutions: TI says that its integrated GaN power stage doubles power density and reduces losses by 80% compared with silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1MHz switching frequencies and slew rates of up to 100V/ns.
System reliability: The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Also, each device provides integrated thermal and high-speed 100ns over-current protection against shoot-through and short-circuit conditions.
Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50mΩ or 70mΩ to provide a single-chip solution for applications ranging from sub-100W to 10kW.

TI is showcasing a 10kW cloud-enabled grid link demonstration in booth 131 (hall C4) at the electronica 2018 trade fair in Munich, Germany (13-16 November). Developed jointly by TI and Siemens, the active demonstration uses TI’s LMG3410R050 600V GaN FET with integrated driver and protection, enabling engineers to achieve 99% efficiency and up to 30% reduction in power component size compared with a traditional silicon design.

The devices are available now in the TI store in 8mm-by-8mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1000-unit quantities.

See related items:

TI expands GaN power portfolio with smallest and fastest GaN FET drivers

TI launches 600V driver-integrated GaN 70mΩ FET power stage for power conversion

Tags: E-mode GaN FETs

Visit: www.ti.com/power-management/gan/overview.html