GTAT’s CTO speaking on silicon carbide at International Forum on Wide Bandgap Semiconductors

GTAT Corp of Hudson, NH, USA (which produces crystal growth equipment for the solar, power electronics and optoelectronics industries as well as sapphire material for precision optics and other specialty industries) says that, at the 2018 International Forum on Wide Bandgap Semiconductors (IFWS 2018) at the Shenzhen Convention and Exhibition Center (23-25 October), its chief technology officer Dr P.S. Raghavan is speaking during the Tutorial and Technical Sessions on 22 and 24 October, respectively.

The tutorial session covers the various wide-bandgap semiconducting materials, with emphasis on silicon carbide (SiC) and the issues associated with the material, including crystal growth techniques, challenges with mass production, the wafering processes, and wafer geometry optimization.

The technical session dives into the challenges of silicon carbide crystal growth, recent progress in silicon carbide substrate technology and the need for further improvements of quality and control of silicon carbide crystal growth.

IFWS is held in conjunction with the China International Forum on Solid-State Lighting (SSLCHINA).

See related items:

GTAT opens new silicon carbide manufacturing plant, corporate HQ and R&D center

GTAT launches SiC boule growth furnace addressing emerging demand for 6” wafers

GT introduces 100mm silicon carbide production furnace

Tags: GT SiC

Visit: www.ifws.org.cn/en/?q=node/209

Visit: www.gtat.com