- News
5 November 2018
Littelfuse completes acquisition of silicon carbide diode and MOSFET developer Monolith
© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.
Littelfuse Inc of Chicago, IL, USA, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), has completed the acquisition of start-up Monolith Semiconductor Inc of Round Rock, TX, USA, which develops silicon carbide (SiC) power device technology. Littelfuse began partnering with Monolith in 2015 and has progressively increased its ownership following a series of technical and commercial product release milestones achieved over the last three years.
“Completing the acquisition of Monolith Semiconductor is an important part of our growth strategy as we expand our capabilities to serve the growing power electronics market,” says Ian Highley, Littelfuse’s senior VP & general manager, Semiconductor Products, and chief technology officer. “Adding silicon carbide technology allows us to evolve our portfolio with strategically relevant and innovative products,” he adds. “We are already seeing meaningful design activity for commercially released products across our regions, with significant interest for industrial and automotive applications.”
Littelfuse introduced its first commercial silicon carbide Schottky diode in May 2017, followed by its first commercial silicon carbide MOSFET that October. To date, the firm has released for mass production more than 20 silicon carbide products, with more than 30 more planned in the coming months.
Littelfuse launches its first 1700V SiC MOSFETs
Littelfuse launches 1200V SiC MOSFETs with 120mΩ and 160mΩ on-resistance at APEC
Littelfuse’s first SiC MOSFET provides ultra-fast switching for power electronics
Littelfuse launches its first GEN2 1200V SiC Schottkys
Littelfuse invests a further $15m in Monolith, taking a majority stake
Littelfuse invests in silicon carbide switch maker Monolith
SiC MOSFET SiC Schottky barrier diodes SiC power devices