23 May 2018

Silvaco’s device simulator selected by FLOSFIA for developing GaO power devices

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Yokohama-based Silvaco Japan Co Ltd - a branch of technology computer-aided design (TCAD) and electronic design automation (EDA) software provider Silvaco Inc of Santa Clara, CA, USA - says that Kyoto-based FLOSFIA Inc has selected its device simulator for the development of GaO power devices using gallium oxide (Ga2O3) made with its proprietary technology.

Great growth in demand is expected for wide-bandgap semiconductors in the future, and in this sector there are high expectations for practical applications of gallium oxide, which has a bandgap exceeding that of silicon carbide (SiC) and gallium nitride (GaN).

FLOSFIA was spun off from Kyoto University in 2011 and specializes in R&D and commercialization of α-Ga2O3 thin films formed by mist chemical vapor deposition (CVD).

By using its MISTEPITAXY method - which takes a proprietary approach to improving the MISTDRY method - FLOSFIA has formed corundum-structured gallium oxide (α-Ga2O3) semiconductor layers on sapphire substrates, creating extremely good quality single crystals, and has developed GaO power devices.

Critical for proceeding efficiently in developing new devices, Silvaco’s device simulators - exemplified by the Atlas/Victory Device - provide broad support for many applications such as leading-edge devices, compound semiconductors and thin-film transistors (TFTs). Silvaco says that FLOSFIA’s decision to use its device simulator was based on their confirmation of its effectiveness in developing power devices using gallium oxide.

“We are developing gallium oxide devices with a completely new proprietary manufacturing method,” says FLOSFIA’s chief technology officer Takashi Shinohe. “Utilizing a device simulator will become important in order to efficiently develop such new devices. For the decision to use Silvaco’s device simulator, the deciding factors were Silvaco’s extensive track record with wide-bandgap semiconductors and Silvaco’s depth of knowledge of power devices. We expect to see even more progress in our development of GaO power devices as we move toward practical applications,” he adds.

“There are high expectations for more compact and more efficient power conversion circuits through the use of wide-bandgap semiconductors, which are expected to be used in various applications including power devices for in-vehicle applications,” says Silvaco’s general manager Naoto Kameda. “Our developers and engineers will be greatly encouraged by the contribution of Silvaco’s device simulator to FLOSFIA’s proprietary technology, which is highly regarded both within and outside of the industry.”

Tags: Silvaco GaO

Visit: www.flosfia.com

Visit: www.silvaco.com