31 May 2018

EpiGaN showcasing RF power and power switching GaN epi techhnology at IMS and PCIM Europe

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

EpiGaN nv of Hasselt, near Antwerp, Belgium - which supplies gallium nitride on silicon (GaN-on-Si) and gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers for power switching, RF and sensor applications – is highlighting the latest enhancements of its GaN epiwafer solutions for RF power and power switching at the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, MA, USA (10–15 June) and at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June). At PCIM Europe, EpiGaN will exhibit in booth 432 (hall 6).

EpiGaN has previously developed 200mm GaN-on-Si 650V epiwafer solutions for power management systems that have entered the mainstream CMOS manufacturing lines of silicon-based integrated device manufacturers (IDMs) and foundries. Recently, for 5G applications, EpiGaN has developed 200mm versions of its HVRF GaN-on-Si as well as 150mm GaN-on-SiC epiwafer solutions. The firm claims that its RF power products have excellent dynamic behavior, the highest power densities at mmW ranges and the lowest RF losses (<0.8dB/mm up to 110GHz) for the GaN-on-Si version of its HVRF product family.

EpiGaN says that a key advantage of its GaN-on-Si epiwafer technology is the in-situ silicon nitride (SiN) capping layer. This feature is said to provide superior surface passivation and device reliability, and enables contamination-free processing in existing standard silicon CMOS production infrastructures.

Also, in-situ SiN structuring allows the use of pure aluminium nitride (AlN) layers as barrier materials, which results in lower conduction losses and/or the design of smaller-size chips for the same current rating.

For ultimate RF performance in the 5G-related 30GHz and 40GHz millimeter-wave bands, EpiGaN has developed high-electron-mobility transistor (HEMT) heterostructures featuring pure AlN barrier layers in combination with an in-situ SiN capping layer to complement the typical AlGaN counterparts. This allows the transistor’s gate to be located very close to the densely populated channel, maximizing the electrostatic coupling between the two (i.e. improving gate control). This will result in the far superior RF transistor characteristics needed for 5G MMIC developments, says EpiGaN.

“EpiGaN has supplied industry-leading GaN epiwafer solutions for power switching and RF power applications to the global semiconductor industry for several years now,” says co-founder & CEO Dr Marianne Germain. “In particular, we are proud about our GaN-on-Si epiwafers that show the lowest RF loss in the market up to 100GHz,” she adds. “This is a timely answer to the increasing demands in wireless communication such as the introduction of 5G and the Internet of Things.”

At PCIM Europe, Germain is participating in a panel discussion ‘GaN - Devices for the Future Design’ at the show’s Fach Forum, organized by Bodo’s Power Systems (6 June). Also, at the Exhibitor Forum (5 June), chief marketing officer Dr Markus Behet will give a presentation ‘How GaN Will Dislodge Si-based Technologies in Power & RF’. In addition, at IMS 2018 on 15 June, chief technology officer Dr Joff Derluy will present ‘Development of Epitaxial Processes for GaN-on-Si for RF Applications’.

See related items:

EpiGaN’s GaN/Si RF material technology at core of EU’s SERENA 5G project

EpiGaN to supply OMMIC with GaN/Si material for new 150mm RF power product line

EpiGaN showcasing 200mm GaN-on-Si epiwafers for 650V power switching and RF power

Tags: EpiGaN GaN-on-Si

Visit: www.ims2018.org

Visit: www.mesago.de/en/PCIM/main.htm