- News
5 March 2018
Transphorm releases 3.3kW high-voltage bridgeless totem-pole PFC GaN reference design
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Transphorm Inc of Goleta, near Santa Barbara, CA, USA ā which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage (HV) gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications ā has released the TDTTP3300-RD, the first complete 3.3kW continuous conduction mode (CCM) bridgeless totem-pole power factor correction (PFC) reference design for high-voltage GaN power systems.
The technical blueprint is used to develop AC-to-DC applications including high-end front-end PFCs for merchant power supplies (servers, gaming, crypto mining, and similar multi-kW high-density applications), on-board chargers for plug-in hybrid (PHEV) and battery electric vehicles (BEV), and broad industrial power supplies.
The reference design delivers 99% efficiency using Transphorm’s third-generation 650V GaN FET technology (TP65H050WS ā 50mĪ© on-resistance) in an industry-preferred, robust TO-247 power package.
The TDTTP3300-RD includes all the resources required to develop products quickly without the need for deep GaN design or DSP firmware coding expertise, including a test report, hardware design guide, firmware design guide (with downloadable firmware), design schematics and Gerber files, and bill of materials (BOM).
“As demonstrated by customer end-products, Transphorm’s high Q+R (quality and reliability) devices are proven to deliver what high-voltage GaN has always promised. Increased power density, efficiency and performance with reduced system cost,” says Philip Zuk, VP of technical marketing. “Now, we are helping designers quickly capitalize on those benefits by eliminating design knowledge gaps,” he adds. “With our 3.3kW reference design, we are arming the industry with a roadmap that was several years in the making.”
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Transphorm GaN-on-Si GaN HEMT Power electronics
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