6 June 2018

ON Semiconductor adds AEC-qualified SiC Schottky diodes for demanding automotive applications

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In booth #342 (hall 9) at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June), ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically intended for demanding automotive applications. The new AEC-Q101 automotive-grade SiC diodes are said to deliver the reliability and ruggedness needed by modern automotive applications, along with the performance benefits synonymous with wide-bandgap (WBG) technologies.

As well as providing superior switching performance and higher reliability compared with silicon devices, the diodes have no reverse recovery current, and switching performance is independent of temperature. The thermal performance, increased power density and reduced EMI, as well as decreased system size and cost, make SiC attractive for the growing number of high-performance automotive applications, the firm adds.

The new SiC diodes are available in popular surface-mount and through-hole packages, including TO-247, D2PAK and DPAK. The FFSHx0120 1200V Gen1 devices and FFSHx065 650V Gen2 devices offer zero reverse recovery, low forward voltage, temperature-independent current stability, extremely low leakage current, high surge capacity and a positive temperature coefficient. They deliver improved efficiency, while the faster recovery increases switching speeds, reducing the size of magnetic components required.

To meet the robustness requirements and perform reliably in the harsh electrical environments of automotive applications, the diodes have been designed to withstand high surge currents. They also include a unique, patented termination structure that improves reliability and enhances stability. Operating temperature range is -55°C to +175°C.

“By expanding our Schottky diode range with AEC-qualified devices, ON Semiconductor is bringing the significant benefits of SiC technology to automotive applications, allowing our customers to achieve the demanding performance requirements of this sector,” says senior director Fabio Necco. “SiC technology is a perfect fit for the automotive environment, where it delivers greater efficiency, faster switching, improved thermal performance and high levels of robustness,” he adds. “In a sector where saving space and weight are critical, the greater power density of SiC - which helps reduce overall solution size - along with the associated benefit of smaller magnetics, is most welcome.”

The new devices are being demonstrated during PCIM, along with the firm’s solutions in areas such as wide-bandgap, automotive, motor control, USB type-C power delivery, LED lighting and smart passive sensors (SPS) for industrial predictive maintenance applications.

ON Semiconductor is also demonstrating its advanced SPICE model that is sensitive to process parameter and layout perturbations, and is therefore said to represent a step-change versus existing industry modelling capabilities. Using the tool, circuit designers can evaluate technologies early in the simulation process, rather than through costly and time-consuming fabrication iterations. A further benefit of the robust SPICE agnostic model is that it can port across multiple industry standard simulation platforms.

See related items:

ON Semiconductor partners with Audi on electronics for autonomous and electric vehicles

ON Semiconductor joins CharIN ecosystems in developing EV charging standards

Tags: SiC Schottky barrier diodes Power electronics

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