5 June 2018

GaN Systems launches 100W and 300W power amplifiers for wireless charging

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GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has unveiled two wireless power amplifiers for wireless charging in high-power consumer, industrial and transport applications: a 100W power amplifier (with ranges from 70W to 100W) and a 300W power amplifier (with ranges from 150W to 1kW).

GaN Systems is displaying both solutions and demonstrating the 300W amplifier in booth 511, hall 9 (9-511) at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5–6 June).

GaN Systems says that, as wireless charging goes mainstream, gallium nitride is removing the limitations by enabling new higher-power system designs that provide the spatial freedom and faster charge times.

The 100W power amplifier [GSWP100W-EVBPA] is suitable for applications in the consumer market for items such as laptop computers, recreation drones, domestic aide robots, power tools, and fast-charging of multiple smart phones.

The 300W power amplifier [GSWP300W-EVBPA] is targeted for the industrial and transportation markets for applications that include delivery drones, warehousing robots, medical units, factory automation, contractor power tools, eBikes, and scooters.

Both power amplifiers have a range of features including current or voltage control, built-in protection circuitry, EMI filtering, and configurable output power. The amplifiers combine GaN Systems’ power transistors with high-frequency GaN E-HEMT drivers from pSemi Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI).

“Our GaN solutions are creating opportunities for the development of high-power, high-efficiency power systems in applications such as wireless power transfer and charging,” says Paul Wiener, VP strategic marketing. “The power ecosystem has changed. There is now availability of high dv/dt level-shifters, fast response IC sensing and control, low-loss high frequency magnetics, and high-performing GaN transistor and amplifier capabilities that are enabling smaller, lighter, lower-cost and more efficient power systems.”

Tags: GaN Systems E-mode GaN FETs Power electronics Peregrine SOI

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.gansystems.com