, II-VI and University of South Florida achieve research milestone in thin-film diamond on silicon technology for 5G wireless

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4 January 2018

II-VI and University of South Florida achieve research milestone in thin-film diamond on silicon technology for 5G wireless

© Semiconductor Today Magazine / Juno Publishing

Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA says that, in collaboration with the University of South Florida (USF), it has achieved a key research milestone in the development of thin-film diamond on silicon technology for 5G wireless communications, adding to its portfolio of gallium arsenide (GaAs) and silicon carbide (SiC) engineered materials for high-speed wireless applications.

Mobile communications service providers are planning to enhance their high-speed broadband services with 5G wireless, which is driving the demand for devices with much higher bandwidth and power efficiency than can be achieved through existing technologies. II-VI and USF have completed the first phase of their joint research program, which was initiated in June 2016, to develop a new technology platform using thin-film diamond on silicon that can enable next-generation high-speed electronic components in 5G wireless handsets.

“Our work with USF accelerates the development timelines and will enable us to be ready in time to serve the market for 5G wireless components,” says Dr. Wen-Qing Xu, general manager of Platform Technology Development and Incubation, II-VI Inc.

The joint research activities of II-VI and USF were partly funded by the Matching Grant Research Program (MGRP) from the Florida High Tech Corridor Council, which is an economic development initiative of the University of South Florida (USF), the University of Central Florida (UCF) and the University of Florida (UF) spanning a 23-county region. Activities included the design, modeling, fabrication and characterization of prototype devices.

“Our research team at USF was able to leverage our area of expertise in micro-machined thin-film diamond on silicon, to rapidly converge on a technical solution for II-VI,” says Dr Jing Wang, associate professor in USF’s Department of Electrical Engineering. “We acknowledge MGRP’s support for this program along with a dozen others in recent years.”

Tags: II-VI Inc

Visit: www.ii-vi.com

Visit: www.floridahightech.com

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