31 August 2018

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine.

Published today and free of charge, Semiconductor Today’s latest issue covers all that is new in gallium arsenide (GaAs), indium phosphide (InP), nitrides, silicon carbide (SiC), silicon germanium (SiGe) and other compound semiconductor materials. The magazine also covers the devices and applications that these materials enable.

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Articles in this issue include:

• Plasmon-enhanced mid-IR photodetection at room temperature
• Hole gas boost for deep UV diode wall-plug efficiency
• Monolithic InP on silicon growth for optoelectronics
• Undoped GaN upper waveguide for reduced laser threshold
• High-material-yield halogen-free vapor phase epitaxy of GaN
• Improving AlGaN transistor channel performance
• Fujitsu triples output power of gallium nitride HEMTs
• Defect-free boron arsenide for efficient thermal management
• Agnitron develops MOCVD for 10kV+ β-phase Ga2O3 switches
• Speeding oscillation of double heterojunction bipolar transistors

Plus, there's the news from organisations such as: 5N Plus, Analog Devices, Aixtron, Alta Devices, AXT, Cree, CST Global, Emcore, Global Foundries, Lumileds, MACOM, Midsummer, NeoPhotonics, Northrop Grumman, NXP, Oclaro, Oxford Instruments, POET, pSemi, Qorvo, Qualcomm, Riber, Sanan, Skyworks, SMI, StratEdge, Suss MicroTec, Veeco, Wolfspeed, and much more.

See company profiles from Aixtron, EV Group, Goodfellow, k-Space, LayTec, Oxford Instruments, and Veeco.

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