10 April 2018

ON Semiconductor orders Veeco Propel HVM MOCVD system for GaN power electronics manufacturing

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that, based on a beta evaluation, ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has ordered its production-level Propel High-Volume Manufacturing (HVM) metal-organic chemical vapor deposition (MOCVD) system, to be used for gallium nitride (GaN) power electronics manufacturing.

As what is described as the industry’s first single-wafer cluster platform, the Propel GaN MOCVD system is specifically designed for high-voltage power-management devices used in data centers; automotive, information and communication technology; defense; aerospace and power distribution systems, among other applications.

“Our prior learning with Veeco’s K465i GaN MOCVD system drove us to investigate the Propel HVM platform for our production ramp,” says Marnix Tack PhD, senior director of corporate R&D and Open Innovation at ON Semiconductor. “The beta-test results demonstrated superior device performance with high uniformity and within-wafer and wafer-to-wafer repeatability, while meeting our cost-of-ownership targets for 6- and 8-inch wafers,” he adds. “As such, the Propel HVM system proved to be the most suitable platform for our power electronics manufacturing needs.”

Introduced recently for high-volume production of power electronics, laser diodes, RF devices and advanced LEDs, the Propel HVM platform is based on Veeco’s single-wafer system with proprietary IsoFlange and SymmHeat technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer.

“The Propel HVM platform is rapidly gaining traction in the industry as innovative companies like ON Semiconductor recognize the benefits of GaN-on-silicon, which will partially replace current silicon technology for power electronics,” says Peo Hansson PhD, senior VP & general manager of Veeco MOCVD operations. “With its highly controlled doping, run-to-run stability, superior wafer uniformity, high productivity and uptime, Propel HVM extends the benefits of our TurboDisc platform to a unique single-wafer architecture,” he adds. “These capabilities benefit customers that seek a superior solution for manufacturing while providing a path for scaling to 8-inch wafers and expansion to RF and other advanced applications.”

Tags: Veeco MOCVD GaN power devices

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