- News
12 September 2017
Transphorm previewing GaN 3.3kW bridgeless totem-pole PFC reference design at EPE’17 ECCE Europe
Transphorm Inc of Goleta, near Santa Barbara, CA, USA – which designs and manufactures JEDEC- and AEC-Q101-qualified 650V gallium nitride (GaN) devices for high-voltage power conversion applications, is on site (in booth 23, Room 2H) at the 19th European Conference on Power Electronics and Applications (EPE’17 ECCE Europe) in Warsaw, Poland (11-14 September) as the latest initiative in its mission to educate application design engineers on high-voltage (HV) GaN use as well as to introduce Transphorm’s new reference design and latest development tools.
Transphorm’s GaN field-effect transistors (FETs) are used in power electronics systems including data center and industrial power supplies, servo motors, photovoltaic inverters and automotive applications, such as on-board chargers.
Preview: 3.3kW bridgeless totem-pole PFC reference design
Transphorm Silicon Valley Center of Excellence’s soon-to-be-released totem-pole power factor correction (PFC) reference design is built on the firm’s next-generation (Gen-III) 650V 35mΩ GaN FET and is being displayed for the first time. The board leverages digital signal processing (DSP) firmware to deliver a turnkey design solution with no code expertise required. The reference design targets engineers building high-efficiency applications for automotive on-board chargers and industrial power supplies.
Education Session: ‘Reliability Testing of High-voltage GaN FETs’
In addition to applying industry-standard qualification tests (i.e. JEDEC and AEC-Q101) to GaN devices, aggressive lifetime testing is required to establish operating life expectancy. Accelerated stress tests, such as high-voltage off-state and high-temperature DC current tests, are used to determine activation energies and acceleration factors that can be used to estimate operating life for any given mission profile. Jim Honea, senior manager of Applications Engineering, is providing an overview of test results and typical application of them during Transphorm’s EPE vendor session (at 16:15 on 13 September in Room 2H, Vendor Session Stage).
Transphorm GaN-on-Si GaN HEMT Power electronics
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