- News
5 October 2017
Wolfspeed highlighting GaN RF technology and GaN-on-SiC foundry services at CSICS
In booth #200 at the 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) in Miami, FL (22–25 October), Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — is exhibiting its GaN RF amplifier technology and showcasing its GaN-on-SiC commercial foundry services, enabling RF design engineers to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
Wolfspeed engineers will be showcasing the firm’s commercial open GaN-on-SiC foundry services, as well as demonstrating their latest GaN-on-SiC power devices for an extensive range of RF power amplifier applications for military communications systems, radar equipment, electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical & scientific (ISM) band. Wolfspeed claims that its GaN RF technology leads the industry in reliability with a failure-in-time (FIT) rate of <10 after billions of device hours of field operation.
“As GaN-on-SiC RF technology has entered the mainstream in commercial wireless infrastructure, our industry-leading open RF foundry and components business continues to innovate to meet the changing cost, efficiency and performance demands needed for upcoming 5G systems,” says Jim Milligan, vice president, RF and Microwave Products.
Wolfspeed’s RF business development manager Simon Wood serves as the exhibition chair of the CSICS conference, and Wolfspeed personnel are presenting one of the CSICS 2017 conference technical sessions. On 25 October at 1:30pm, RF applications engineer Kasyap Patel will deliver a presentation ‘Current Contours-Based Input Matching Network (IMN) Design Methodology for Broadband GaN Doherty Power Amplifiers’. Co-presenters for this session are H. Golestaneh (RF/mmWave design engineer at Peraso Technologies) and S. Boumaiza (professor, ECE at University of Waterloo, Canada).
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