- News
23 October 2017
Toshiba adds second-generation 650V SiC Schottky barrier diodes in DPAK surface-mount package
Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in July - has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages (shipping in volume now).
Picture: Second-generation 650V SiC Schottky barrier diodes in DPAK surface-mount type package.
Up to now, TDSC has focused on SiC SBDs in through-hole packages. The addition of its first SiC SBDs in DPAK surface-mount packages meets what the firm says are customer requirements to reduce system size and thickness.
The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in both surge peak forward current IFSM (to about 7-9.5 times the current rating, IF(DC)) and in figure of merit VFxQc (to about 1/3 lower than first-generation products, indicating high efficiency). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.
The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including:
- power factor correction (PFC) circuitry for high-efficiency power supplies, micro inverter circuits, chopper circuits (various power supplies of hundreds of watts or more), and free-wheel diodes for switching devices;
- consumer products and OA equipment: power supplies for large-screen 4K LCD and OLED TV sets, projectors, multi-function copiers, etc; and
- industrial equipment: power supplies for telecom base stations, PC servers, solar micro-inverters, etc.
TDSC says that it will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.
Toshiba SiC Schottky barrier diodes
https://toshiba.semicon-storage.com/ap-en/product/diode/sic.html
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