- News
10 October 2017
MACOM launches 500W GaN-on-Si power transistor for L-band airport surveillance radar
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the newest entry in its gallium nitride on silicon (GaN-on-Si) power transistor portfolio for pulsed L-band radar systems targeted for airport surveillance radar (ASR) applications at 1.2-1.4GHz. Delivering high efficiency at peak pulse power levels up to 500W, the MAGX-101214-500 is expected to outperform premium-priced GaN-on-SiC-based transistors, and far exceed the performance, efficiency and power density of legacy silicon LDMOS-based devices.
The new MAGX-101214-500 enables customers to scale to higher power levels across a host of ASR applications, delivering 500W output power and greater than 70% power efficiency under pulsed conditions at 50V operation. Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimize circuit size, the transistors help to enable rugged, compact radar systems underpinned with efficient, simplified cooling and power supply architectures, says MACOM.
The MAGX-101214-500 builds on MACOM’s portfolio of GaN-on-Si power transistors, which have demonstrated field-proven reliability in harsh environmental conditions. To date, over 1 million MACOM GaN-on-Si devices have been shipped to customers around the world.
“The continued expansion of MACOM’s GaN-on-Si product portfolio enables customers to address an ever-widening range of RF power requirements while achieving performance profiles that meet and exceed GaN-on-SiC, at significantly less cost at scaled volume production levels,” claims Greg French, senior product manager, RF Power. “Our proven technology leadership in GaN-on-Si combined with our decades-long heritage in civil and defense radar are among the many factors fueling our innovation in these important markets.”
MACOM is showcasing the MAGX-101214-500 in booth #200 at European Microwave Week (EuMW 2017) in Nuremberg, Germany (10-12 October). Products are sampling to customers now, with production release targeted for first-half 2018.
M/A-COM GaN RF power transistors
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