- News
2 November 2017
MACOM showcasing GaN-on-Si portfolio and high-performance MMICs and diodes at COMCAS
In booth #44/45 at IEEE Conference on Microwaves, Communications, Antennas, Electronic Systems and Bio-Medical Engineering (COMCAS 2017) in David Intercontinental Hotel, Tel Aviv, Israel (13–14 November), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) is showcasing its RF product and technology portfolio optimized for industrial, scientific, medical, point-to-point wireless and X-band radar, including:
- high-power GaN-on-Si;
- RF small-signal portfolio (featuring high-performance MMICs and basestation and mobile backhaul devices);
- high-performance diodes (diode design and application-specific solutions); and
- hi-rel and component devices (the latest screened products for mission-critical aerospace applications).
Experts from MACOM are also participating in various sessions throughout COMCAS, including:
- Tim Boles speaking on 'High Power mmW Switch Technologies’ on Monday 13 November (3pm, Room A); and
- Frank Traut speaking on ‘GaN-on-Si: Thermal Considerations’ on Wednesday 15 November (9am, Hall J).
 
    














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    Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
    Today and the editorial material contained within it and related media is
    the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
    whole or part without permission from Juno Publishing and Media Solutions
    Ltd is forbidden. In most cases, permission will be granted, if the magazine
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