11 May 2017

WIN increases GaAs wafer manufacturing capacity by over 20%

WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – has completed the phase 2 expansion at its newest wafer fab. Fab C is now fitted with state-of-the-art cleanrooms, efficient process lines and the latest equipment for gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) production, epitaxial growth of compound semiconductors, as well as fabrication and test of optical devices. WIN reckons that the continued build-out of the new manufacturing facility further validates the pure-play foundry model in the compound semiconductor industry.

Serving customers in mobile power amplifier (PA), WiFi, wireless infrastructure and optical markets, WIN provides a broad portfolio of heterojunction bipolar transistor (HBT), pseudomorphic high-electron-mobility transistor (pHEMT), integrated BiHEMT technology solutions and optical devices. The firm’s manufacturing services can support most applications from 50MHz to 150GHz and through light-wave.

“In response to increasing demand across all market segments, we continue to add manufacturing capacity at our third wafer fab located in Guishan, Toayuan City, Taiwan,” says senior VP & chief operating officer Kyle Chen. “Known as Fab C, the facility now supports mass production of a wide range of compound semiconductor technologies,” he adds. “When fully built out, the 706,000ft2 facility will more than double our capacity.”

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Tags: WIN Semiconductors

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