6 March 2017

Wolfspeed launching 12.7–13.25GHz 60W three-stage GaN-on-SiC power amplifier at SATELLITE 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC RF devices — is exhibiting and contributing to the technical program at SATELLITE 2017 in Washington DC (6–9 March).

Exhibiting at booth #2138, Wolfspeed is introducing a monolithic microwave integrated circuit (MMIC) power amplifier for lower Ku-band satellite communication applications. Operating from 12.7–13.25GHz instantaneously with an output power of 60W, the CMPA1D1C060D three-stage GaN-on-SiC power amplifier provides three times higher gain than competing GaAs and GaN input-matched transistors currently on the market, it is claimed. A power efficiency increase of about 30% is also achieved by leveraging Wolfspeed’s GaN MMIC technology, the firm adds.

“Satellite technology is advancing rapidly, and the wide bandwidth and higher efficiency advantages of GaN will be a key part of next-generation payloads for both commercial and military applications,” says RF & microwave director Jim Milligan. “With Wolfspeed’s proven track record of faster cycle times, higher first-pass design successes, and greater reliability than our competitors, we’re looking forward to joining the discussion on the future of satellite technology.”

Tags: Wolfspeed

Visit: http://2017.satshow.com

Visit: www.wolfspeed.com/RF