15 March 2017

Transphorm displaying customer solutions at APEC

In booth #824 at the Applied Power Electronics Conference (APEC 20017) in Tampa, Florida (26–30 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what it claims are the industry’s only JEDEC-qualified 650V gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications, is hosting a customer’s public unveiling of an innovative switch-mode power supply design solution that will enable engineers to integrate a GaN-powered solution into their applications, helping to bridge knowledge gaps as well as reducing design time, it is reckoned.

Transphorm is also giving presentations in two sessions during APEC:

• 29 March (10:30–11am, Room 21) - ‘How to Design with GaN in Under an Hour’ by Philip Zuk (senior director, technical marketing); and
• 30 March (10:30–11am, Room 15/16) - ‘Preventing GaN Device VHF Oscillation Using a Drain Ferrite Bead’ by Zan Huang (director, field applications, US and Asia).

Transphorm will also display customer solutions currently in production, such as:

• the first AC-DC front-end switch-mode power supply (SMPS) implementing bridgeless totem-pole PFC topology;
• the first GaN-based redundant power supply demonstrating performance and size efficiencies outpacing those of incumbent technology.

In addition to GaN modules and discretes in various packages, Transphorm is also hosting static and live demonstrations of high-voltage GaN system development and device innovations.

In addition, in booth #537, Digi-Key Electronics will showcase Transphorm’s new 2.5kW Half-Bridge Evaluation Board.

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics

Visit: www.apec-conf.org

Visit: www.transphormusa.com