13 January 2017

Mitsubishi Electric to demo high-efficiency, wideband Doherty amplifier for next-gen LTE base-stations

In booths #1 and #2 at Radio & Wireless Week (RWW2017) in Phoenix, AZ, USA (16-17 January), Mitsubishi Electric US Inc is presenting a hands-on mini lab showcasing its high-efficiency, wideband Doherty amplifier. Also, at 10:50am on 16 January, the firm is presenting a technical paper (Session MO2D-3: '3.0-3.6GHz Wideband, over 46% Average Efficiency GaN Doherty Power Amplifier with Frequency Dependency Compensating Circuits') describing the wideband Doherty power amplifier design technique for next-generation LTE base stations using Mitsubishi Electric's latest gallium nitride (GaN) transistor technology.

To break the inherent narrow-band limitation of conventional Doherty design methodology, the paper proposes a frequency dependency compensating circuit and a modified quarter-wavelength inverter incorporating the transistor package parasitic elements.

With improved bandwidth and efficiency compared with earlier design methodologies, this compact design delivers more than 2.5W of average power with efficiencies above 45.9% across the full 3.0-3.6GHz band (20MHz LTE signal). This enables the design of more competitive LTE amplifiers capable of carrier aggregation scenarios in this band, says the firm. In conjunction with digital pre-distortion (DPD) to maintain -50dBc adjacent-channel leakage ratio (ACLR), the use of the wideband efficient GaN Doherty design can reduce the complexity and energy consumption of the radio, further reducing the base-station total cost of ownership, it adds.

Mitsubishi Electric's full line-up of GaN devices, with frequencies in the L-, S-, C-, and Ku-bands at output powers ranging from 2 to 100W, supports a variety of end-communications applications including cellular base-station, satellite, ground station and point to point.

See related items:

Mitsubishi Electric develops first GaN Doherty power amplifier with 600MHz bandwidth above 3GHz

Tags: Mitsubishi Electric GaN HEMT

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