, MACOM showcasing GaN-on-Si portfolio and MMICs and diodes at International Radar Symposium India

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4 December 2017

MACOM showcasing GaN-on-Si portfolio and MMICs and diodes at International Radar Symposium India

© Semiconductor Today Magazine / Juno Publishing

In booth #B6 at the International Radar Symposium India 2017 (IRSI-17) in the Nimhans Convention Center, Bangalore, India (14–16 December), MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) is showcasing its RF product and technology portfolio optimized for civil and defense radar, public and military radios and satellite communication applications. 

This includes:

  • high-power gallium nitride (GaN)-on-silicon;
  • RF small-signal portfolio, featuring high-performance monolithic microwave integrated circuits (MMICs) and base-station and mobile backhaul devices; and
  • high-performance diodes and application-specific solutions.

Also at IRSI on 14 December (16:15-16:30pm) in Hall B, MACOM’s Tim Boles is participating in a conference session ‘Microwave and mmW Switch Technologies’.

Tags: M/A-COM

Visit: www.radarindia.com

Visit: www.macom.com

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