3 April 2017

SiGen and Soitec terminate ITC patent lawsuit

Soitec of Bernin, near Grenoble, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers, and Silicon Genesis Corp (SiGen) of Santa Clara, CA, USA (which was founded in 1997 to provide engineered substrate process technology and equipment for the semiconductor, display and optoelectronics markets) have brought an end to their dispute regarding the importation and sale in the USA of certain SOI wafers by Soitec. Both companies have hence agreed to dismiss all pending litigations, including the proceedings in front of the US International Trade Commission (ITC).

Soitec says that the agreement reinforces its intellectual property position and allows it to better serve and protect its customers and business partners.

“This settlement is a positive outcome for SiGen and we believe will be beneficial for the SOI industry,” comments SiGen’s president & CEO Ted Fong. “We can now focus on the development of new product applications with our proprietary layer transfer process technology.” SiGen develops substrates using a beam-induced thick-film and thin-film room-temperature controlled cleave layer transfer process.

See related items:

SOI wafer maker Soitec refutes SiGen’s patent infringement complaint to ITC

Tags: Soitec SOI Engineered substrates

Visit: www.sigen.com

Visit: www.soitec.com