14 November 2016

Wolfspeed presenting at Defense Manufacturing Conference

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC RF devices —is exhibiting and contributing to the technical program at the 47th annual Defense Manufacturing Conference (DMC 2016) in in Denver, CO, USA (28 November– 1 December).

"The theme for DMC 2016 is 'Understand the challenges; seize the opportunities,' so both our exhibition and conference presentation focus on the specific defense industry challenges that Wolfspeed's advanced wide-bandgap technology can address," says Dr Jeff Barner, Wolfspeed's manager of foundry services. Wolfspeed not only provides the defense community with design assistance, proven processes, testing and support but does so with a track record of faster cycle times, higher first-pass design successes, and greater reliability, he claims.

Exhibiting in booth #503, Wolfspeed is promoting its RF foundry (claimed to be the world's largest dedicated, commercial wide-bandgap production device facility) in addition to its latest RF product introductions for defense applications, including the highest-power 50V GaN high-electron-mobility transistor (HEMT) demonstrated to date. Launched in September, the 900W CGHV14800 GaN HEMT delivers a minimum of 800W of pulsed power at 1.2–1.4GHz and 50V operation with better than 65% drain efficiency, features high-efficiency, high-gain and wide-bandwidth capabilities, and is suitable for L-band radar amplifier applications including air traffic control (ATC) radar, penetration radar, anti-missile system radar, target-tracking radar and long-range surveillance radar.

At DMC 2016, Wolfspeed is also contributing to the technical program. At 2–2:30pm on 1 December, director of business development Dr Ty McNutt is delivering a technical presentation 'Enabling SiC Power Module Technology for Advanced DoD Systems'.

Tags: Wolfspeed

Visit: http://dmcmeeting.com

Visit: www.wolfspeed.com/RF