- News
21 November 2016
United Silicon Carbide agrees for Richardson to distribute its SiC products globally
Richardson Electronics Ltd of LaFox, IL, USA (a global channel partner for electron devices, power electronics, and RF & microwave components) has announced a new distribution agreement with United Silicon Carbide (USCi) of Monmouth Junction, NJ, USA. The global agreement supports the expansion of USCi's products to new customers.
USCi specializes in developing high-efficiency SiC devices and customized products, using process expertise in Schottky barrier diodes and SiC switches. USCi says that its technology and products enable affordable power efficiency in key markets that will drive a greener economy.
"USCi's unique SiC cascodes offer a rapid and easy way to upgrade silicon MOSFET-based designs to the higher performance and greater efficiency of SiC," says Greg Peloquin, executive VP of Richardson Electronics Power & Microwave Technologies group. "This unique technology and Richardson's world class global capabilities of bringing new products to market will accelerate the introduction of USCi to the global market and customer base," he reckons.
Richardson Electronics is a "design-in oriented and application-focused distributor with a worldwide presence and, through their highly technical expertise, they can support customers throughout the entire design cycle, which can make the difference between success and failure," comments USCi's sales director Christopher Rocneanu. "Furthermore, Richardson has an outstanding reputation for launching the newest products and latest technologies to the global marketplace, which will help us reach new customers and take advantage of increased opportunities for SiC applications."
SiC JFETs SiC Schottky barrier diodes SiC power devices