26 May 2016

NXP launches GaN transistors for EW and communication systems

NXP Semiconductors N.V. of Eindhoven, The Netherlands has expanded its portfolio of broadband gallium nitride (GaN) RF power transistors suitable for electronic warfare (EW) and battlefield radio applications, including launching six new driver or final-stage amplifiers with frequency coverage as broad as 1-3000MHz.

The new GaN-on-SiC transistors combine high power density, ruggedness and very flat frequency response over wide bandwidths. All are input matched to optimize operating frequency range, and can withstand a VSWR (voltage standing wave ratio) greater than 20:1 with 3dB overdrive without degradation. They are also part of NXP's Product Longevity Program.

The transistors' broadband frequency coverage from HF to S-band allows them to cover virtually all frequencies used by radios or the lower-frequency sections of electronic systems. This reduces the number of RF power transistors required to build an amplifier with a specific RF output level, which decreases the amplifier size and bill of materials, says NXP.

The new transistors include:

• MMRF5011N (28V) and MMRF5013N (50V): operating at 1-3000MHz with RF output power up to 12W CW, 15dB gain, and 60% efficiency, housed in an OM-270-8 over-molded plastic package;
• MMRF5015NR5: operating at 1-2700MHz with RF output power up to 125W CW, 16dB gain, and 64% efficiency, housed in an OM-270-2 over-molded plastic package;
• MMRF5019N: operating at 1-3000MHz with RF output power up 25W CW, 18dB gain, and 40% efficiency, housed in an OM-270-8 over-molded plastic package;
• MMRF5021H: operating at 1-2700MHz with RF output power up to 250W CW, 16dB gain, and 58% efficiency, housed in a NI-780H-4L air-cavity ceramic package; and
• MMRF5023N: operating at 1-2700 MHz with RF output power up to 63W CW, 16dB gain, and 60% efficiency, housed in an OM-270-2 over-molded plastic package.

"Our customers want to reduce the size, weight and power of military systems even at the device level," says Paul Hart, executive VP & general manager of NXP's RF Power business unit. "Our new GaN transistors meet these requirements and can provide improved ruggedness, broad operating bandwidth and high efficiency," he adds. 

The new transistors join NXP's expanding portfolio of RF power transistors suitable for defense systems that operate in HF, VHF, UHF and L-band radar, IFF transponders and avionics systems. In addition to GaN devices, NXP offers more than 40 LDMOS transistors covering 1-3000MHz with RF output power up to 1500W.

NXP showcased the new GaN-on-SiC transistors in booth 1839 at the IEEE International Microwave Symposium (IMS2016) in San Francisco (23-26 May). The six new transistors are either sampling or in production. Application circuits are available that support CW operation in frequencies that are within the range 30-2600MHz.

Tags: NXP

Visit: www.nxp.com/RFmilitary