- News
19 May 2016
Silicon carbide firm Global Power Technologies signs franchise agreement with Richardson Electronics
Richardson Electronics Ltd of LaFox, IL, USA (a global channel partner for electron devices, power electronics, and RF & microwave components) has signed a new franchise agreement with Global Power Technologies Group (GPTG), a full-service manufacturer of silicon carbide (SiC) semiconductors for the commercial power market. The agreement aligns with Global Power Technologies Group's efforts to identify new opportunities using SiC technology, as market demand continues to expand for power electronics and green energy technologies. Richardson has this extensive portfolio of components in stock and ready for distribution.
Global Power Technologies Group is a portfolio company of the Global Opportunities Fund (GOF), which is a venture fund uniquely focused on the application of wide-bandgap materials technology for the development of high-frequency, high-temperature and efficient power semiconductor devices. GPTG produces 100mm and 150mm epitaxial wafers, SiC discrete diodes, SiC discrete MOSFETs, SiC modules and sub-systems for multiple market sectors.
"We are pleased to align with a key innovator of SiC discrete power devices and SiC-based power modules and subsystems for the electric vehicle/hybrid electric vehicle, server, solar inverter, lighting, and power industries," says Greg Peloquin, executive VP of Richardson Electronics' Power & Microwave Technologies group. "Global Power Technologies Group's focus on highly efficient and compact products with high integration and performance at a low cost results in game-changing power electronics for our customers," he adds.
"Richardson Electronics performs a unique service to the power semiconductor industry and is an ideal fit, with a highly technical sales force that concentrates on achieving design-wins," comments Michael Digangi, executive VP & chief business development officer of Global Power Technologies Group.
SiC epitaxy SiC MOSFET SiC Schottky barrier diodes SiC power devices