2 May 2016

GaN showcasing customers' systems using its transistors at PCIM Europe

In booth # 9-511 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is showcasing a lineup of its customers' systems that are enabled by gallium nitride transistors.

The customer products featured include:

• a 1kW energy storage system that is 50% smaller than prior silicon-based solutions;
• high-current power modules used in the industrial and automotive industries;
• a 1.2kW battery charger that delivers 33% more power in the same volume as its silicon predecessor;
• a 12kW stop-start generator showcasing a 5x size reduction;
• a >97% efficient, ultra-compact electric vehicle (EV) charger;
• a multi-voltage, high-speed 1.5kW motor controller; and
• a high-power, high-efficiency traction inverter using GaN power modules.

In addition to commercial products, GaN Systems is exhibiting the inverter enabled by its transistors which recently won Google's Little Box Challenge. The team Red Electrical Devils from CE+T Power of Wandre, Belgium, won the US$1m first prize for designing, building, and demonstrating an inverter with the highest power density in the smallest volume: 143W/cubic inch in only 14 cubic inches. Also on show is be a half-bridge evaluation board that simplifies GaN transistor testing.

See related items:

GaN Systems' transistors used in winning inverter design for $1m Google Little Box Challenge

Google and IEEE launch $1m Little Box Challenge to create smaller power inverter

Tags: GaN Systems E-mode GaN FETs Power electronics inverters

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.gansystems.com