20 July 2016

RF high-power semiconductor market for wireless infrastructure flattening out in 2016 despite overall market exceeding $1.5bn in 2015

Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power Semiconductors'. While certain market and sub-market segments are showing moderate growth, it is gallium nitride (GaN) that is capturing meaningful market share in RF high-power semiconductors, especially in wireless infrastructure, the report notes.

"GaN is increasing its market share in 2016, and we believe it will be a significant force by 2021," says research director Lance Wilson. "This now mainstream technology bridges the gap between two older technologies, exhibiting the high-frequency performance of gallium arsenide and power handling capabilities of silicon LDMOS."

Outside of wireless infrastructure in the RF high-power semiconductor business, defense-oriented market segments show the strongest performance. Despite the poor press for defense-oriented electronic hardware, the actual performance in 2015 was better than originally thought for some sub-segments. In total, these defense-oriented segments will be a significant market and one to keep an eye in future, Wilson believes.

Tags: ABI RF power semiconductors GaN

Visit: www.abiresearch.com/market-research/service/high-power-rf-active-devices