23 February 2016

GaN power devices market to grow at 24.5% to $2.6bn in 2022

The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from MarketsandMarkets.

Three major segments that show tremendous growth are satellite communication, radar and wireless applications due to the launches of new GaN power semiconductor devices for these application segments and continuous technological developments to improve the power handling capacity and increase the switching frequency.

Emergence of new technologies driving growth

The advent of GaN-on-silicon technology (with GaN deposited on highly doped silicon substrates) has facilitated the development of high-brightness and ultra-high-brightness LEDs. Several other technologies facilitated the development of phosphor-converted LEDs, leading to the production of blue, violet, purple, UV and white LEDs over the past decade. A more recent development in this field uses quantum dot (QD) technology. The biggest advantage and driver for the GaN device market is the continuous emergence of technologies to overcome the challenges faced at every stage, increasing production volume every year, says the report.

ICT and consumer electronics segments contribute most market share

The technical evolution of GaN devices is accelerating usage in the information communication technology (ICT) end-user sector (including RF, satellite and telecom), due primarily to increased demand and the extensive industry focus on various types of RF and wireless applications.

Consumer electronics is one of the main revenue-contributing end-user sectors, with significant revenue for GaN opto-semiconductor devices. Revenue growth is also slowly gaining pace with the gradual penetration of GaN power semiconductor devices into various consumer electronics applications.

Japan to dominate GaN wafer market

Japan is expected to take the largest market share and dominate the GaN wafer market from 2016 to 2022. The Japanese market is driven by the rise in applications in this region and continuous developments in the semiconductor industry. In terms of the distribution of key players, Japan ranks second of all the geographical regions, with several players being headquartered in the country.

Some of the major players in Japan in the GaN power device market include Renesas Electronics, ROHM Co Ltd, Nichia Corp, Toshiba Corp, and Toyoda Gosei Ltd.

Other key players in the GaN power devices market are listed as Fujitsu Ltd (Japan), Koninklijke Philips N.V. (Netherlands), Texas Instruments (U.S.), EpiGaN NV (Belgium), NTT Advanced Technology Corp (Japan), RF Micro Devices Inc (USA), Cree Inc (USA), Aixtron SE (Germany), IQE plc (UK), and Mitsubishi Chemical Corp (Japan).

Tags: GaN power devices

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