28 September 2015

Qorvo expands plastic-packaged GaN RF transistors to X-band for marine and avionics radar

Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched three new unmatched gallium nitride (GaN) RF transistors in low-cost QFN plastic packages - designed to operate in the 8-12GHz frequency band - to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.

Qorvo's GaN technology, paired up with the small packaging, enables high linear gain and power efficiency. The TGF2977-SM (in a 3mm x 3mm QFN package) has output power (P3dB) of 37dBm, drain efficiency of 50%, and linear gain of 12.5dB. The TGF2978-SM (in a 3mm x 3mm QFN package) has output power of 43dBm, drain efficiency of 45%, and linear gain of 11dB. The TGF2979-SM (in a 3mm x 4mm QFN package) has output power of 44dBm, drain efficiency of 45%, and linear gain of 11dB.

"Qorvo is expanding GaN in low-cost QFN plastic packaging to include X-band transistors for marine and avionics radar," says Roger Hall, general manager of Aerospace and Defense Products. "Radar manufacturers that are converting Magnetrons to solid-state power amplifiers (SSPAs) and radar arrays can produce smaller, more efficient radar units as a result of GaN's size, weight and power efficiencies," he adds. "They are also assured that Qorvo's best-in-class GaN solutions have met stringent heat and moisture stress testing so that the products will operate in harsh environments."

The new X-band power transistors will be available in fourth-quarter 2015. Qorvo showcased its portfolio of plastic-packaged GaN solutions at European Microwave Week (EuMW 2015) in Paris, France (8-10 September).

Tags: Qorvo GaN RF X-band radar

Visit: www.qorvo.com