- News
3 September 2015
Pasternack expands portfolio of GaN power amplifiers
Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has expanded its range of gallium nitride (GaN) coaxial power amplifiers (PAs).
The high power density of GaN technology dissipates heat more effectively, which results in amplifier designs that have significantly higher output power levels over broadband and narrowband frequencies, says the firm. The rugged connectorized designs have the advantage of high output load impedance, offering easier impedance matching over wider bandwidths using lower-loss components. Applications include commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.
Picture: Pasternack's GaN power amplifiers.
Pasternack's range of RF amplifiers includes GaN-based models that feature very high gain levels from 43dB to 60dB across mostly broad frequency bands ranging from 30MHz to 7.5GHz. Saturated output power levels range from 10W to 100W, with 20-35% power-added efficiency (PAE). The thermal efficiency of GaN technology enables these assemblies to be integrated into smaller more compact coaxial packages with the same level of high reliability.
All of the firm's high-power GaN amplifiers have single voltage supplies that are internally regulated. The 50Ω input/output matched designs are adaptable to a range of power and modulation requirements. The PAs also have harmonic response of -15dBc to -20dBc under worst-case conditions. The GaN amplifiers are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat-sinks and cooling fans. Most designs are EAR99.
"These highly efficient PAs cover broad and narrowband frequencies with high levels of gain and power in small coaxial packages," says Tim Galla, Active RF Components product manager.
Pasternack's GaN power amplifiers are in-stock and ready to ship now.