2 September 2015

LayTec issues improved n.k database for III-nitrides in EpiNet 2015 release

In-situ metrology system maker LayTec AG of Berlin, Germany and its R&D partners recently published high-accuracy high-temperature n.k data for arsenides and phosphides, enabling in-situ process control of layer thickness and composition for these materials at the same level of accuracy as x-ray diffraction (XRD) or photoluminescence (PL) [May's 2015 Compound Semiconductor Manufacturing Technology (CS MANTECH) in Scottsdale, AZ, USA and June's 16th European Workshop of Metal Organic Vapour Phase Epitaxy (EWMOVPE 2015) in Lund, Sweden].

Now, at the 11th International Conference on Nitride Semiconductors (ICNS-11) in Beijing, China (30 August - 4 September), LayTec is presenting a similarly expanded and improved n.k database for the III-nitrides as part of the latest version of its EpiNet software.

LayTec reckons that the high-accuracy n.k data, in conjunction with Pyro 400 wafer temperature control, should pave the way to more comprehensive and direct statistical process control (SPC) of III-nitride-based manufacturing on patterned sapphire substates (PSS), silicon and, most importantly, gallium nitride (GaN) wafers.

Tags: LayTec Metrology MOCVD GaN

Visit: www.laytec.de