6 November 2015

WIN expands GaN portfolio by adding 0.45μm-gate GaN-on-SiC power process for 4G/5G macro-cell base-station power amplifiers

WIN Semiconductors Corp of Tao Yuan City, Taiwan - a pure-play provider of gallium arsenide (GaAs) and gallium nitide (GaN) wafer foundry services for the wireless, infrastructure and networking markets – has expanded its GaN technology portfolio by adding the NP45 gallium nitride on silicon carbide (GaN-on-SiC) process.

NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base-station power amplifiers operating at 2.7GHz and above, where bandwidth and linearity performance are key differentiators. The macro-cell base-station power amplifier market is projected to grow to more than $1bn annually by 2020, and GaN technology is expected to become the technology of choice for this application, says WIN. Due to its efficiency, bandwidth and linearity, GaN devices outperform the incumbent LDMOS silicon technology, particularly in the higher-frequency bands utilized in 4G/4.5G networks, claims WIN.

The WIN NP45 process technology is fabricated on 100mm silicon carbide substrates and operates at a drain bias of 50V. In the 2.7GHz band this technology provides saturated output power of 7W/mm with 17dB linear gain and more than 75% power-added efficiency. These performance metrics make NP45 suitable for use in high-bandwidth 4G-5G high-power macro-cell transmitters and small cells, says WIN. NP45 sample kits are available and can be obtained by contacting the firm's regional sales managers.

Tags: WIN Semiconductors GaN-on-SiC

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