30 November 2015

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine.

Published today and free of charge, Semiconductor Today’s latest issue covers all that is new in gallium arsenide (GaAs), indium phosphide (InP), nitrides, silicon carbide (SiC), silicon germanium (SiGe) and other compound semiconductor materials. The magazine also covers the devices and applications that these materials enable.

Click here or issue cover for direct access

Articles in this issue include:

• PLAT4M supply-chain project develops three mature platforms
• Slanted trench approach to side-mode suppression in FP lasers
• Tunnel junction for vertical-cavity surface-emitting laser
• Alternating current LEDs on silicon substrates
• Polarized white LED without phosphor conversion
• Strategies to avoid efficiency drooping in white LEDs
• Improving performance of magnesium doping for p-type GaN
• Quaternary nitride barrier boosts two-dimensional electron gas
• Bulk GaN substrate enables 4kV-breakdown vertical p-n diode
• Claiming record 4.7kV breakdown for GaN p-n diodes

Plus, there's the news from organisations such as: 5N Plus, Aixtron, Anadigics, Avago, AXT, Bruker, Cree, Crystal IS, CS Clean Systems, Emcore, Firecomms, First Solar, GaN Systems, GigOptix, GlobalFoundries, Indium Corp, Imec, IQE, LandMark Optoelectronics, LayTec, Lumileds, MACOM, Microsemi, NeoPhotonics, Oclaro, Osram, Plessey, Qorvo, Rubicon, Skyworks, Toshiba, TowerJazz, Veeco, WIN Semiconductors, and much more.

See company profiles from Aixtron, EV Group, Goodfellow, k-Space, LayTec, Oxford Instruments, and Veeco.

If your company is a supplier of equipment, materials, or services for the manufacture of compound semiconductor wafers and devices, and you are involved in marketing those products, then please see Semiconductor Today's 2015 Media Kit.

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