4 November 2015

LandMark Optoelectronics expanding capacity by 20%

LandMark Optoelectronics Corp, which makes gallium arsenide (GaAs)- and indium phosphide (InP)-based laser diode and photo-detector epitaxial wafers for optical communications, industrial applications and special-purpose usage, is to expand production capacity by 20% by adding four metal-organic chemical vapor deposition (MOCVD) systems to reach 18 in total in fourth-quarter 2015, reports Taiwan's Digitimes.

As a partner of Intel's Silicon Photonics research project, LandMark started production of silicon-based epiwafers at the end of third-quarter 2015. Two of the new MOCVD systems will be used to produce such wafers, the firm says. Of its total 2015 revenue, LandMark expects GaAs- and InP-based epiwafers to account for 80-85% and Si-based epiwafers to account for 15-20%.

LandMark recorded revenue of NT$552m (US$16.8m) in third-quarter 2015. This has led to total year-to-date revenue (January-September) of NT$1.407bn.

Tags: MOCVD Silicon photonics

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