19 May 2015

Freescale launches ultra-wideband RF power GaN transistors in plastic packages

RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages.

"The industry-leading bandwidth of these two products will enable our customers to replace two or even three separate RF PAs [power amplfiers] with a single RF lineup, vastly reducing system cost," reckons Paul Hart, senior VP & general manager of Freescale's RF business. "In addition, the devices' ultra-low thermal resistance will allow customers to reduce the cost of their cooling systems, or run at full CW-rated power to much higher case temperatures," he adds. 

Offered in two-lead and eight-lead configurations, the new OM-270 package extends Freescale's proprietary OMNI RF plastic packaging technology to the smallest outline yet, and adds compatibility with GaN.

"We have innovated the capability to metalurgically bond our GaN-on-SiC chips to copper flanges, and over-mold them to enable unprecedented thermal performance," says Mali Mahalingam, Freescale fellow & head of RF package development. "In addition, this new package platform supports complex internal matching schemes that enable superior broadband performance."

Freescale's first two plastic RF power GaN transistors to employ the new packaging technology are:
MMRF5015N: a 100W, 50V, true CW ultra-wideband GaN transistor suitable for high-power military and civil communication systems. Thermal resistance is less than 0.8°C/W (a >30% improvement over competing products, it is claimed). The MMRF5015N is sampling now in an evaluation fixture that demonstrates what is claimed to be an unprecedented 200-2500MHz bandwidth with a minimum of 12dB gain and 40% efficiency over the entire band.

MMRF5011N: a 10W, 28V, true CW ultra-wideband transistor, demonstrating 200-2600MHz bandwidth in an available applications circuit. Suited to lower-power military and civil handheld radio communications devices, the MMRF5011 is sampling now.

Freescale is displaying and demonstrating the transistors in booth #3031 at the 2015 IEEE MTT-S International Microwave Symposium (IMS).

Planned for volume production in third-quarter 2015, both new products are included in Freescale's Product Longevity Program, as are all products in the RF Military portfolio.

Tags: Freescale GaN RF power transistors GaN-on-SiC

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