25 May 2015

Cree introduces new 900V SiC MOSFET family at PCIM

At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH — showcased its portfolio of SiC diodes, MOSFETs, modules, and bare die (including introducing a new family of 900V SiC MOSFETs) and demonstrated how its SiC technology can enable smaller, lower-cost and more efficient power systems capable of switching at higher frequencies and operating at higher temperatures.

Demonstrations included: a lightweight (<33kg), high-power-density 50kW solar inverter (based on the latest Cree SiC modules) just one-fifth the size and weight of equivalent, industry-leading silicon-based inverters and capable of achieving 99% efficiency; a 220W SiC-based LED power supply; and a power stack demonstrating how Cree's 1.2kV, 300A SiC modules can revitalize older, IGBT-based systems.

In the conference, during the PCIM vendor session, Cree Power's technical marketing manager Marcelo Schupbach discussed Cree's power technology and its impact on PV inverter designs. During the PCIM poster session, application engineering manager Jimmy Liu presented the poster 'High Density and High Power Single-Stage LED Driver with a 1200V SiC MOSFET'. During the Yole Développement event, marketing director Paul Kierstead discussed SiC's impact on chargers and inverters. Finally, during the Bodo's Power Systems Forum, business development & programs manager Jeffrey Casady discussed new developments in SiC MOSFETs from 900V to 10kV.

See related items:

Cree launches first 900V SiC MOSFET platform

Tags: Cree SiC power modules SiC MOSFET

Visit: www.cree.com/power

Visit: www.mesago.de/en/PCIM/main.htm