21 May 2015

Analog Devices' silicon SPDT switch spans 9kHz to 13GHz with settling time 100 times faster than GaAs

Analog Devices Inc (ADI) of Norwood, MA, USA (which provides ICs for analog and digital signal processing applications) has introduced an absorptive single-pole double-throw (SPDT) switch specified for the 9kHz to 13GHz frequency band, with high isolation of 48dB and low insertion loss of 0.6dB at 8GHz operation.

The HMC1118LP3DE is the first offering in ADI's new RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which offers critical advantages over legacy gallium arsenide (GaAs) RF switches, it is claimed. These include a settling time that is 100 times faster than GaAs (7.5μs for 0.05dB of final RF output level), robust ESD (electro-static discharge) protection (2000V versus 250V for GaAs), and the ability to extend the switch's low-frequency end 1000 times lower than GaAs while maintaining high linearity.

Supplied in a 3mm × 3mm QFN SMT package, the HMC1118LP3DE also offers what is claimed to be industry-leading RF power handling of 4W (35.5dBm) in through path and 0.5W (27dBm) in terminated path and hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth, ADI claims, allowing engineers to increase allowed RF power in their applications and systems without the risk of damage to the part.

The HMC1118LP3DE is optimized for high isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13GHz, while maintaining high signal fidelity down to 9kHz. The combination of features suits demanding test & measurement, automated test equipment (ATE), defense electronics, and wireless communication applications as a lower-cost alternative to legacy GaAs switches, the firm says. Pricing is $6.18 each in 1000-unit quantities.

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Tags: Analog Devices RF switches

Visit: www.analog.com/hmc1118