15 June 2015

II-VI launching next-generation 808nm laser, boosting chip output above 10W

In hall B1 (booth 403) at Laser World of Photonics 2015 in Munich, Germany (22-25 June), engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – represented by its subsidiaries II-VI Suwtech of China and II-VI Laser Enterprise GmbH of Zurich, Switzerland – is launching its next-generation 808nm multi-mode high-power laser diode single-emitter portfolio.

The new chip has been optimized to deliver output powers above 10W with higher efficiencies at improved reliability, enabling next-generation higher-power fiber-coupled modules for pumping in material processing and medical applications.

The expanded portfolio of 808nm fiber-coupled modules offers output powers from 15W up to 30W with the same mechanical dimension and fiber configuration (200μm fiber core/0.22NA). The new fiber-coupled products are an expansion of the proven high-volume generic 'BMU' single-emitter platform. These high-output-power/brightness BMUs come in an easy-to-mount compact hermetic package, says the firm. Diode-pumped solid-state (DPSS) laser manufacturers, medical instrument makers and other subsystem developers can upgrade their product performance (by replacing existing low-power modules), simplify their product configuration (by using fewer modules) and improve their product reliability (through less complex fiber management), adds the firm.

II-VI says that, based on its chip design technology and high-volume package manufacturing, the new products offer extended lifetime. Also, the wavelength range and fiber connector types can be tailored to meet specific customer applications. The new-generation laser diode chip is also available with an open heat-sink on an AlN submount or on a C-mount.

Tags: II-VI Inc Laser diodes

Visit: www.ii-vi.com