6 January 2015

Cree releases new 1200V MOSFET design kit

Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable half-bridge circuit.

Picture: Cree’s new MOSFET design kit.

Claimed to be quick and easy to assemble and use, the new design kit enables comparative testing between silicon insulated-gate bipolar transistors (IGBTs) and Cree MOSFETs, and provides an effective layout example for properly driving Cree MOSFETs with minimal ringing, the firm adds. Designed to assist engineers new to the higher switching speeds of SiC devices, the kit provides access to critical test points, enabling simple and accurate measurements, including VGS, VDS and IDS. The kit is also configurable to several different power conversion topologies in buck or boost configurations. Half-bridge and three-phase configurations can be constructed and analyzed by respectively combing two and three kits.

The design kit includes two 80mOhm, 1200V MOSFETs; two 1200V, 20A Schottky diodes in standard TO-247 packages; a half-bridge-configured design board equipped with isolated gate drives; power supplies; and all of the other components necessary to assemble the power stage. The kit also includes a gate driver schematic and layout reference for a TO-247-packaged Cree MOSFET, as well as a comprehensive user manual and sourcing sheet with basic block diagrams and specifications.

See http://response.cree.com/choosewisely to view a video demonstration of the advantages of designing with Cree MOSFETs, download the user manual and SiC reference designs, or purchase the Cree MOSFET design kit through one of Cree’s distributors.

Tags: Cree SiC

Visit: www.cree.com/power