4 February 2015

ST extends silicon carbide portfolio with 215mΩ 1200V MOSFET

STMicroelectronics of Geneva, Switzerland has launched the SCT20N120 silicon carbide power MOSFET, which it says brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.

The 1200V SCT20N120 extends the firm's family of SiC MOSFETs, with on-resistance (RDS(ON)) better than 290mΩ all the way to the 200°C maximum operating junction temperature (Tj). Typical RDS(ON) is 215mΩ. Switching performance is also consistent over temperature due to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability, says the firm.

ST claims that, in addition to their lower energy losses, its SiC MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight and bill-of-materials costs, the firm adds. Also, the SCT20N120's high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.

As for the firm's existing 80mΩ SCT30N120 1200V SiC MOSFET, ST's proprietary HiP247 package with enhanced thermal efficiency allows reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline.

The SCT20N120 is in full production, priced from $8.50 for orders of 1000 pieces.

See related items:

ST unveils 1200V SiC power MOSFETs with 200°C temperature rating

Tags: STMicroelectronics SiC MOSFET

Visit: www.st.com/web/en/catalog/sense_power/FM100/CL2062/SC1704