26 February 2015

Fairview launches family of 0.5-40GHz broadband RF amplifiers

Fairview Microwave Inc of Allen, TX, USA, which supplies on-demand microwave and RF components, has released its expanded range of broadband RF amplifiers, operating in octave bands between 0.5 and 40GHz with noise figures ranging from 2.5 to 6dB across the entire frequency range.

Picture: Fairview's broadband RF amplifiers.

The new broadband amplifier portfolio consists of 18 part numbers to choose from that are commonly employed in a wide spectrum of military and commercial applications including wireless communications, telecom infrastructure, radar, electronic warfare, sensors, test instrumentation, and microwave backhaul. The wideband amplifiers feature highly efficient gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (HEMT) technology with 50 Ohm hybrid MICs (microwave integrated circuits) that are enclosed in environmentally sealed metal packages with nickel or gold plating.

The new RF amplifiers have gain levels ranging from 20dB to 48dB, gain flatness as low as ±0.5dB, and power output ratings (P1dB) from 20mW to 2W. The DC voltage supply ranges from +8.5Vdc to +15Vdc while bias current ranges from 125mA to 2500mA. The broadband amplifiers use either stainless-steel SMA or 2.92mm connectors, and some of the modules are hermetically sealed with field-replaceable connectors. The 2.92mm connectorized model operates to 40GHz.

"The expansion of our offering of active RF components is an ongoing company initiative to help meet the demand of our customers and the market," says VP & general manager Brian McCutcheon. "This new portfolio of broadband amplifiers is a sign of commitment to our customers that we will continue to be their on-demand source for all urgently needed RF products."

The new broadband RF amplifiers are available to ship from stock now.

Tags: GaAs pHEMT

Visit: www.fairviewmicrowave.com/rf-products/rf-broadband-amplifiers.html