9 April 2015

Cree announces large-signal accuracy of GaN-on-SiC HEMTs

Cree Inc of Durham, NC, USA has released a new application note 'Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model' describing the accuracy of its large-signal models for RF power transistors, which allow RF design engineers to reduce power amplifier (PA) design iterations, design time, and development costs.

Cree says that its gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) devices are growing increasingly popular in applications including broadband amplifiers, cellular infrastructure, tactical & satellite communications and test instrumentation due to their high efficiency, high gain, and relatively simple matching characteristics. However, it is notoriously difficult to predict the large-signal performance of RF power devices like these due to self-heating and the complex dependence of nonlinearity component parameters on signal level, thermal effects, and ambient conditions. Consequently, design engineers must either develop hardware and conduct time-consuming and potentially inaccurate load-pull measurements or rely on the accuracy of large-signal models to evaluate such devices in their simulation environments.

Cree says that, to put designers at ease and spare them the time and cost of conducting load-pull measurements, as well as the risk of generating defective data, it carefully compared measured and modeled data for its 100W and 200W GaN-on-SiC HEMTs. Verified using a standard load-pull system at optimal impedances over multiple frequencies, the results demonstrate the exceptional accuracy with which the firm's proprietary large-signal models represent actual device performance, it is claimed.

Further, in addition to providing RF design engineers with assurance and reducing design time and development costs related to load-pull measurements, Cree's highly accurate models also allow engineers to conduct in-depth 'what-if' analyses that can close layout links and enable faster design cycles and more first-pass design successes, the firm adds.

Tags: Cree GaN-on-SiC HEMT

Visit: www.cree.com/RF/Tools-and-Support/Model-form