- News
30 September 2014
EPC launches 300V GaN power transistors for high-frequency applications
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2025, a 300V power transistor for use in applications requiring high-frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high-frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting.
The EPC2025 has a voltage rating of 300V and maximum on-resistance (RDS(on)) of 150mΩ with a 4A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2025 measures 1.95mm x 1.95mm for increased power density.
“As end-systems increasingly require smaller-size DC-DC power converters, especially those used in portable equipment, the demand for corresponding higher-speed switching power converters is increasing,” says EPC’s co-founder & CEO Alex Lidow. “The EPC2025 allows power designers to increase the switching frequency of their power conversion systems for increased efficiency and smaller footprint,” he adds.
The EPC9042 development board is a 300V maximum-device-voltage half-bridge with onboard gate driver, featuring the EPC2025, onboard gate drive supply and bypass capacitors. The 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the 300V EPC2025 eGaN FET.
The EPC2025 eGaN FETs are priced at $5.29 each in for 1000-unit quantities. The EPC9042 development boards are priced at $137.75 each. Both are available for immediate delivery from Digi-Key.
http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page
http://epc-co.com/epc/Products/eGaNFETs/EPC2025.aspx
http://epc-co.com/epc/Products/DemoBoards/EPC9042.aspx