24 September 2014

EPC launches first commercially available monolithic eGaN transistor half-bridge

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half-bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end-user’s power conversion system, says EPC.

Specifically, the EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems by nearly 93% at 10A and more than 90.5% at 25A when switching at 500kHz and converting from 12V to 1.2V.

Each device within the EPC2100 half-bridge component has a voltage rating of 30V. The upper FET has a typical RDS(on) of 6mΩ, and the lower FET has a typical RDS(on) of 1.5mΩ. The high-side FET is about a quarter the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2100 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6mm x 2.3mm for increased power density.

“Now designers have the first example of what’s to come with eGaN technology – a family of monolithic eGaN half-bridge devices that save space, improve efficiency and lower system costs,” says EPC’s co-founder & CEO Alex Lidow. “As power conversion systems stretch into the multi-megahertz domain, the integration of discrete devices becomes increasingly important for high system efficiency and power density,” he adds.

The EPC9036 development board is 2” x 2” and contains one EPC2100 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.

The EPC2100 monolithic half-bridge price for 1000 units is $5.81 each. The EPC9036 development boards are priced at $137.75 each. Both are available from distributor Digi-Key.

Tags: EPC E-mode GaN FETs

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