3 September 2014

EPC presenting seminar and technical presentations on GaN at Darnell’s Energy Summit

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is presenting a half-day educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2014 in Richmond, Virginia (23-25 September). 

The summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

Expanding on the GaN FET technology textbook written by EPC, the ‘Educational Seminar: GaN Transistors for Efficient Power Conversion’ will explain how GaN technology works. The session will discuss fundamental GaN technology and how to use these devices. To showcase their real-world value, several applications including efficient DC-DC conversion, high-frequency envelope tracking and wireless power transfer will be presented. The seminar will conclude with a look at the future of gallium nitride as an emerging displacement technology for MOSFETs.

In addition, technical presentations to be given by EPC featuring GaN FETs include the following:

Plenary session:

• ‘GaN Transistors – Giving New Life to Moore’s Law’ by Alex Lidow.

Technical sessions:

• ‘Pushing the State of the Art in High Frequency Hard-Switching Converters Using eGaN FETs’ by Johan Strydom;

• ‘Performance Comparison Using eGaN FETs in 6.78 MHz Class-E and ZVS Class-D Wireless Power Transfer’ by Michael de Rooij’ and

• ‘Advances in DC-DC Converters With eGaN FETs’ by David Reusch.

Tags: EPC E-mode GaN FETs

Visit: http://epc-co.com/epc/EventsandNews/Events