8 September 2014

Japan's Sanix chooses Cree’s 1200V SiC MOSFETs for 9.9kW solar inverters

Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan’s Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of commercial photovoltaic systems in the fast-growing Japanese solar energy market.

“Through this partnership with Cree and their SiC technology, Sanix is able to capture more market share in the competitive Japan solar market,” says Sanix’s general manager Hiroshi Soga. “Cree’s silicon carbide MOSFETs were critical for Sanix to meet our efficiency and thermal design targets. SiC switches reduced losses in our inverter electronics by more than 30% versus the silicon super-junction MOSFETs we were considering,” he adds. “In addition to providing a large efficiency gain, Cree’s latest generation C2M SiC MOSFETs were priced competitively, making it possible to replace lower-voltage, less rugged, and less efficient silicon MOSFETs.”

Utilized in the primary power conversion stage of the solar inverter, Cree’s 1200V C2M0080120D MOSFETs feature faster switching characteristics and up to one-third the switching losses of comparabl -rated 900V silicon super-junction MOSFETs, it is claimed. By significantly reducing switching losses, the SiC MOSFETs enable lower total system energy losses, higher frequency switching, and cooler operating temperatures, Cree adds. These benefits improve conversion efficiency and reduce the system’s size, weight, complexity, and thermal management requirements. At the system level, performance is improved, cost is decreased, and lifetime of the inverter is extended, it is reckoned.

“Cree SiC power devices can provide significant advantages with regard to PV inverter efficiency, reliability, and cost, and will provide Sanix with a critical competitive advantage as they continue to expand their share of the Japanese solar market,” says Cengiz Balkas, general manager & VP, Cree Power and RF.

Demonstrated to achieve up to three times the power density of typical silicon technology, Cree’s C2M family of SiC MOSFETs is available in 1200V and 1700V, ranging from 1Ω to 25mΩ. C2M MOSFETs have been designed into a range of industrial power applications since their launch in March 2013 and continue to experience increasing demand. Cree is currently delivering production volumes of SiC MOSFETs to Sanix and other PV inverter manufacturers, as well as to makers of industrial power supplies, auxiliary power converters, battery chargers, and motor drives.

See related items:

Cree begins volume production of second generation SiC MOSFET

Tags: Cree SiC MOSFET

Visit: https://sanix.jp/index_e.htm

Visit: www.cree.com/Power/Products/MOSFETs