19 November 2014

Silvaco joins Japan project on gallium oxide power devices

Yokohama-based Silvaco Japan Co Ltd - a branch of Silvaco Inc of Santa Clara, CA, USA, a provider of technology computer-aided design (TCAD), circuit simulation and electronic design automation (EDA) software tools - has joined the cross-ministerial Strategic Innovation Promotion (SIP) program next-generation power electronics project ‘Research and Development on Fundamental Technologies of Gallium Oxide Power Devices’ promoted by New Energy and Industrial Technology Development Organization (NEDO). Other participants in the project include National Institute of Information and Communication Technology (NICT), Tamura Corp, Tokyo University of Agriculture and Technology, and New Japan Radio Co Ltd.

The NICT, Tamura Corp and KOHA Co Ltd have developed what is reckoned to be the first MOSFET using the wide-bandgap semiconductor material gallium oxide. To promote gallium oxide as the next-generation power device material, the project included R&D ranging from the basic physical properties to the technologies for future industrial applications, such as bulk and thin-film crystal growth technology, device process technology and module technology. The project’s target is to establish the fundamental technologies for gallium oxide power devices by 2018.

Transistors and diodes with gallium oxide are expected to have advantages in power device characteristics such as higher breakdown voltage, higher output and lower dissipation compared to traditional compound semiconductor devices. Moreover, it is theoretically possible with β-Ga2O3 to create large-diameter single-crystalline substrates by the melt growth method, at low energy and at low cost, enabling the production of bulk single crystal. It is reckoned that these characteristics will offer significant advantages for industrial applications.

“Silvaco has many years of experience in the development, sales and technical support of semiconductor process and device simulators,” says Silvaco Japan’s president Iliya Pesic. “Silvaco has key advantages in simulation technology for silicon and compound semiconductor power devices,” he adds. “Silvaco’s leading edge technologies with proven performance in wide-bandgap semiconductors will enable it to make a significant contribution to the project.”

See related items:

NICT demonstrates first gallium oxide transistors

Tags: Silvaco NICT Ga2O3 Gallium oxide transistors MESFET

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Visit: www.nict.go.jp