28 November 2014

Raytheon UK to develop 650V/60A SiC MOSFET for auto maker

Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor (MOSFET) for use in electric, hybrid-electric and plug-in hybrid electric vehicles.

Raytheon says that, with expertise in the development of components and modules intended for safety-critical applications within harsh environments, it will employ its SiC fabrication experience to develop a MOSFET, rated at 650V/60A, which can be mass-produced cost-effectively and be fully compliant with the stringent ISO/TS 16949 automotive quality standard.

“The use of silicon carbide overcomes many of the problems restricting the use of traditional silicon semiconductor devices, for certain applications, within electric vehicles and their hybrid derivatives,” says John Kennedy, head of Raytheon UK’s Integrated Power Solutions. “The benefits of SiC include higher-temperature operation, low switching losses and low parasitics – making possible the production of reliable, high-power devices in small and lightweight packages that do not have the same cooling requirements as silicon-based components.”

Raytheon is Europe’s only SiC production foundry, backed by a team of engineers experienced in the fabrication of MOSFETs, Schottky barrier diodes (SBDs) and bipolar devices. Also, while known for its technical capabilities in the defence and aerospace sectors, Raytheon has been active in the automotive industry for several years, supplying semiconductor devices for use in vehicle suspension system sensors, as employed by several well-known car manufacturers, since 1995.

“We were selected for this particular MOSFET project because of our silicon carbide expertise, proven processes and project management skills, all of which combine to produce a reduced risk engagement for the customer,” says Kennedy. “Moreover, we are an established fabricator of semiconductor devices for automotive power and control applications, using either silicon carbide or traditional silicon,” he adds.

The development of the 650V/60A MOSFET is a multi-phase project, and early results are promising, the firm says.

See related items:

Scotland’s Raytheon Glenrothes opens SiC foundry

Tags: Raytheon SiC MOSFET SiC Schottky barrier diodes SiC power devices

Visit: www.raytheon.co.uk/semiconductors